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| CYStech Electronics Corp. High Voltage NPN Epitaxial Planar Transistor Spec. No. : C210T3 Issued Date : 2004.07.01 Revised Date : 2004.07.22 Page No. : 1/4 BTC4620T3 Features * High breakdown voltage. (BVCEO =350V) * Low saturation voltage, typically VCE(sat) =0.1V at IC/IB=10mA/1mA. * Complementary to BTA1776T3 Symbol BTC4620T3 Outline TO-126 BBase CCollector EEmitter ECB Absolute Maximum Ratings (Ta=25C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation (TA=25) Power Dissipation (TC=25) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PD Tj Tstg Limit 350 350 5 100 200 1.2 7 150 -55~+150 Unit V V V mA W C C BTC4620T3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) hFE fT Cob Min. 350 350 5 80 Typ. 0.1 70 2.6 Max. 0.1 0.1 0.6 1 200 Unit V V V A A V V MHz pF Spec. No. : C210T3 Issued Date : 2004.07.01 Revised Date : 2004.07.22 Page No. : 2/4 Test Conditions IC=50A, IE=0 IC=1mA, IB=0 IE=50A, IC=0 VCB=200V, IE=0 VEB=4V, IC=0 IC=20mA, IB=2mA IC=20mA, IB=2mA VCE=10V, IC=10mA VCE=30V, IC=10mA, f=10MHz VCB=30V, f=1MHz *Pulse Test : Pulse Width 380s, Duty Cycle2% Classification Of hFE Rank Range P 80~140 Q 100~200 BTC4620T3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current 1000 Saturation Voltage---(mV) 10000 Spec. No. : C210T3 Issued Date : 2004.07.01 Revised Date : 2004.07.22 Page No. : 3/4 Saturation Voltage vs Collector Current Current Gain---HFE 100 VCE = 10V 1000 VCE(SAT) @ IC = 20IB 10 VCE = 5V VCE = 1V 100 VCE(SAT) @ IC = 10IB 1 1 10 100 Collector Current---IC(mA) 1000 10 1 10 Collector Current---IC(mA) 100 Saturation Voltage vs Collector Current 1000 Power Dissipation---PD(W) Saturation Voltage---(mV) 1.6 Power Derating Curve 1.2 VBE(SAT) @ IC =10IB 0.8 0.4 100 1 10 100 1000 Collector Current---IC(mA) 0 0 50 100 150 200 Ambient Temperature---TA() Power Derating Curve 10 Power Dissipation---PD(W) 8 6 4 2 0 0 50 100 150 Case Temperature---TC() 200 BTC4620T3 CYStek Product Specification CYStech Electronics Corp. TO-126 Dimension D A B 123 G C I Spec. No. : C210T3 Issued Date : 2004.07.01 Revised Date : 2004.07.22 Page No. : 4/4 E J K M Marking: 3 4 C4620 Style: Pin 1.Emitter 2.Collector 3.Base F H L 1 2 3-Lead TO-126 Plastic Package CYStek Package Code: T3 *: Typical DIM 1 2 3 4 A B C D E Inches Min. Max. *3 *3 *3 *3 0.1500 0.1539 0.2752 0.2791 0.5315 0.6102 0.2854 0.3039 0.0374 0.0413 Millimeters Min. Max. *3 *3 *3 *3 3.81 3.91 6.99 7.09 13.50 15.50 7.52 7.72 0.95 1.05 DIM F G H I J K L M Inches Min. Max. 0.0280 0.0319 0.0480 0.0520 0.1709 0.1890 0.0950 0.1050 0.0450 0.0550 0.0450 0.0550 *0.0217 0.1378 0.1520 Millimeters Min. Max. 0.71 0.81 1.22 1.32 4.34 4.80 2.41 2.66 1.14 1.39 1.14 1.39 *0.55 3.50 3.86 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: * Lead: 42 Alloy; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTC4620T3 CYStek Product Specification |
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